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HomeMaterials Science ForumMaterials Science Forum Vols. 126-128Nucleation and Grain Growth in Silicon Films...

Nucleation and Grain Growth in Silicon Films Deposited by Thermal Decomposition of Disilane

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Intergranular and Interphase Boundaries in Materials

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Periodical:

Materials Science Forum (Volumes 126-128)

Pages:

431-434

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.126-128.431

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Online since:

January 1993

Authors:

A.T. Voutsas, M.K. Hatalis

Keywords:

Disilane, Grain Growth, LPCVD, Nucleation, Poly-Silicon

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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