Behaviour of Boron After Implantation into Silicon-Schottky Diodes: A β-NMR Study on the Fermi-Level Dependence

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Periodical:

Materials Science Forum (Volumes 143-147)

Edited by:

Helmut Heinrich and Wolfgang Jantsch

Pages:

135-140

Citation:

H.-P. Frank et al., "Behaviour of Boron After Implantation into Silicon-Schottky Diodes: A β-NMR Study on the Fermi-Level Dependence ", Materials Science Forum, Vols. 143-147, pp. 135-140, 1994

Online since:

October 1993

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$38.00

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