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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Behaviour of Boron After Implantation into...

Behaviour of Boron After Implantation into Silicon-Schottky Diodes: A β-NMR Study on the Fermi-Level Dependence

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

135-140

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.135

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Online since:

October 1993

Authors:

H.-P. Frank, E. Diehl, K..-H. Ergezinger, Bernd Fischer, Bernd Ittermann, F. Mai, K. Marbach, S. Weißenmayer, G. Welker, H. Ackermann, H.J. Stöckmann

Keywords:

Diffusion, Lattice Location, Low-Dose Implantation, Point Defect

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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