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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Role of Point Defects in Oxygen Agglomeration in...

Role of Point Defects in Oxygen Agglomeration in Si

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

147-152

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.147

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Online since:

October 1993

Authors:

Michio Tajima, Hiroshi Takeno, M. Warashina, Takao Abe

Keywords:

Oxygen, Photoluminescence (PL), Silicon, Thermal Donor, Vacancy

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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