Paper Titles

EPR/ENDOR Investigation on the Nature of Heat Treatment Centers in Silicon
p.141

Role of Point Defects in Oxygen Agglomeration in Si
p.147

DLTS Studies of Thermally Treated Carbon-Rich Silicon
p.153

A Metastable Selenium-Related Center in Silicon
p.159

The Excited ⁵T₁ State of the Fe_i^o -Center in Silicon
p.165

Identification of the Iron-Boron Line Spectrum in Silicon
p.171

Ab-Initio Total Energy Calculation of Iron-Aluminum Pairs in Silicon
p.177

On the Sensitivity of Optical Reflectivity Spectra to the Bulk Defects in Semiconductors - Example of Crystalline Si
p.183

Detection of Defects Responsible for Lifetime in p-Type Si
p.189

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147The Excited 5T1 State of the Feio -Center in...

The Excited ⁵T₁ State of the Fe_i^o -Center in Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 17

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

165-170

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.165

Citation:

Cite this paper

Online since:

October 1993

Authors:

A. Thilderkvist, G. Grossmann, Mats Kleverman, Hermann G. Grimmeiss

Keywords:

FT-IR, Interstitial, Iron, Jahn-Teller, Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: