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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Detection of Defects Responsible for Lifetime in...

Detection of Defects Responsible for Lifetime in p-Type Si

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

189-194

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.189

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Online since:

October 1993

Authors:

M. Zazoui, J.C. Bourgoin, Didier Stiévenard, D. Deresmes

Keywords:

Electron Irradiation, Lifetime, Silicon, Spin Dependent Recombination

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Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

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