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Electronic Structure of P_In Antisite in InP
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On the Microscopic Structures of Three Different Arsenic Antisite-Related Defects in Gallium Arsenide Studied by Optically Detected Electron Nuclear Double Resonance
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The Electron Irradiation Induced Defect E1,E2 in GaAs: Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model
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The Assignment of the 78/203meV Double Acceptor in GaAs to B_As Impurity Antisite Centers
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Interaction of Atomic Hydrogen with Arsenic Antisites and Arsenic Interstitials in Gallium Arsenide
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147On the Microscopic Structures of Three Different...

On the Microscopic Structures of Three Different Arsenic Antisite-Related Defects in Gallium Arsenide Studied by Optically Detected Electron Nuclear Double Resonance

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

217-222

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.217

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Online since:

October 1993

Authors:

Johann Martin Spaeth, K. Krambrock, M. Hesse

Keywords:

Antisite Defects, EL2, Gallium Arsenide, Microscopic Defect Structure, Optically Detected ENDOR, Optically Detected EPR

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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