Ab-Initio Total Energy Calculation of Iron-Aluminum Pairs in Silicon
p.177
p.177
On the Sensitivity of Optical Reflectivity Spectra to the Bulk Defects in Semiconductors - Example of Crystalline Si
p.183
p.183
Detection of Defects Responsible for Lifetime in p-Type Si
p.189
p.189
Spin Dependent Photoconductivity in Silicon-on-Sapphire
p.195
p.195
Group-V Antisite Defects, VGa , in GaAs
p.201
p.201
Electronic Structure of PIn Antisite in InP
p.211
p.211
On the Microscopic Structures of Three Different Arsenic Antisite-Related Defects in Gallium Arsenide Studied by Optically Detected Electron Nuclear Double Resonance
p.217
p.217
The Electron Irradiation Induced Defect E1,E2 in GaAs: Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model
p.223
p.223
The Assignment of the 78/203meV Double Acceptor in GaAs to BAs Impurity Antisite Centers
p.229
p.229
Group-V Antisite Defects, VGa , in GaAs
Abstract:
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Periodical:
Materials Science Forum (Volumes 143-147)
Pages:
201-210
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Online since:
October 1993
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© 1994 Trans Tech Publications Ltd. All Rights Reserved
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