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The Electron Irradiation Induced Defect E1,E2 in GaAs: Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model
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The Assignment of the 78/203meV Double Acceptor in GaAs to B_As Impurity Antisite Centers
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Interaction of Atomic Hydrogen with Arsenic Antisites and Arsenic Interstitials in Gallium Arsenide
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147The Assignment of the 78/203meV Double Acceptor in...

The Assignment of the 78/203meV Double Acceptor in GaAs to B_As Impurity Antisite Centers

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

229-234

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.229

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Online since:

October 1993

Authors:

R.C. Newman, B.R. Davidson, R. Addinall, R. Murray, J.W. Emmert, J. Wagner, W. Götz, G. Roos, Gerhard Pensl

Keywords:

78/203meV Double Acceptor, B_As Antisite in GaAs

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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