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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Infrared and Raman Studies of Carbon Impurities in...

Infrared and Raman Studies of Carbon Impurities in Highly Doped MBE AlAs:C

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

247-252

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.247

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Online since:

October 1993

Authors:

B.R. Davidson, R.C. Newman, R.E. Pritchard, D.A. Robbie, M.J.L. Sangster, J. Wagner, A. Fischer, K. Ploog

Keywords:

AlAs:C, IR LVM Spectroscopy, Keating Model, Raman LVM Spectroscopy

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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