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Theory of Carbon Complexes in Gallium Arsenide and Aluminium Arsenide
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Incorporation of Silicon in (311)A and (111)A GaAs Grown by Molecular Beam Epitaxy
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Si Acceptors and their Passivation by Hydrogen in p-Type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAs
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The Lattice Location and Electrical Activity of Ion-Implanted Sn in InP
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Nitrogen-Hydrogen Complexes in GaP and GaAs
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Recombination and Optical Excitation Properties of the Ga-O-Ga Center in Gallium Arsenide
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Si Acceptors and their Passivation by Hydrogen in...

Si Acceptors and their Passivation by Hydrogen in p-Type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAs

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

265-270

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.265

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Online since:

October 1993

Authors:

M.J. Ashwin, R. Addinall, M.R. Fahy, R.C. Newman, I. Silier, E. Bauser

Keywords:

Hydrogen Passivation, LPE GaAs:Si, LVM IR Spectroscopy, MBE GaAS:Si

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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