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The Lattice Location and Electrical Activity of Ion-Implanted Sn in InP
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Nitrogen-Hydrogen Complexes in GaP and GaAs
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Recombination and Optical Excitation Properties of the Ga-O-Ga Center in Gallium Arsenide
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Direct Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al_0.22Ga_0.78As
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Recombination and Optical Excitation Properties of...

Recombination and Optical Excitation Properties of the Ga-O-Ga Center in Gallium Arsenide

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

283-288

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.283

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Online since:

October 1993

Authors:

H.C. Alt

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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