Paper Titles

Nitrogen-Hydrogen Complexes in GaP and GaAs
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Recombination and Optical Excitation Properties of the Ga-O-Ga Center in Gallium Arsenide
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Direct Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al_0.22Ga_0.78As
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Defects in Electron Irradiated GaP and GaInP
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Positron Lifetime Investigations of Electron Irradiated InP
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Study of Indium Implanted GaAs: Positron Annihilation and Electrical Measurements
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Fine Structure of the (Fe²⁺, h) Bound States in GaP and InP
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New Evidence for Bound States in the Charge Transfer Spectra of Transition-Metal-Doped III-V Semiconductors
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FTIR Absorption and Photoluminescence Study of a New Defect System in GaP:Fe:S
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Positron Lifetime Investigations of Electron...

Positron Lifetime Investigations of Electron Irradiated InP

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

299-304

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.299

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Online since:

October 1993

Authors:

Th. Bretagnon, S. Dannefaer, D. Kerr

Keywords:

Defect, Electron Irradiation, InP, Positron Annihilation

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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