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Study of Indium Implanted GaAs: Positron Annihilation and Electrical Measurements
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Fine Structure of the (Fe²⁺, h) Bound States in GaP and InP
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New Evidence for Bound States in the Charge Transfer Spectra of Transition-Metal-Doped III-V Semiconductors
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Study of Indium Implanted GaAs: Positron...

Study of Indium Implanted GaAs: Positron Annihilation and Electrical Measurements

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

305-310

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.305

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Online since:

October 1993

Authors:

Wulf Pfeiffer, L. Liszkay, A. Burchard, Manfred Deicher, R. Magerle, C. Ronning, Kimmo Saarinen, Pekka J. Hautojärvi

Keywords:

Annealing, GaAs, Ion Implantation, Positron Annihilation

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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