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FTIR Absorption and Photoluminescence Study of a New Defect System in GaP:Fe:S
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New Aspects of (Semi-Insulating) GaP:Cu
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Isotopic Structure and the Jahn-Teller Effect in Fe-Doped III-V Materials
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Positron Annihilation at Ionized Acceptors and Vacancies in Indium Phosphide After Electron Irradiation
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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147New Aspects of (Semi-Insulating) GaP:Cu

New Aspects of (Semi-Insulating) GaP:Cu

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

329-334

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.329

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Online since:

October 1993

Authors:

C. Eder, Viktor Schlosser, R.P. Leon, Kin Man Yu, Eicke R. Weber

Keywords:

Copper (Cu), GaP, Mobility, Precipitation, Semi-insulating (SI)

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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