Paper Titles

Fine Structure of the (Fe²⁺, h) Bound States in GaP and InP
p.311

New Evidence for Bound States in the Charge Transfer Spectra of Transition-Metal-Doped III-V Semiconductors
p.317

FTIR Absorption and Photoluminescence Study of a New Defect System in GaP:Fe:S
p.323

New Aspects of (Semi-Insulating) GaP:Cu
p.329

Isotopic Structure and the Jahn-Teller Effect in Fe-Doped III-V Materials
p.335

Native Vacancies in Semi-Insulating GaAs Observed by Positron Lifetime Spectrocopy under Photoexcitation
p.341

Positron Annihilation at Ionized Acceptors and Vacancies in Indium Phosphide After Electron Irradiation
p.347

Properties of Important Deep Level T₃ in Semi-Insulating Gallium Arsenide
p.353

Electron and Hole Traps in AlAs p⁺-n Junctions Grown by MBE
p.359

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Isotopic Structure and the Jahn-Teller Effect in...

Isotopic Structure and the Jahn-Teller Effect in Fe-Doped III-V Materials

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 17

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

335-340

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.335

Citation:

Cite this paper

Online since:

October 1993

Authors:

A.M. Hennel, Andrzej Wysmolek, Rafał Bożek

Keywords:

Ⅲ-V, Isotopic Effects, Jahn-Teller Effect, Metal Impurities

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: