Direct Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al0.22Ga0.78As

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Periodical:

Materials Science Forum (Volumes 143-147)

Edited by:

Helmut Heinrich and Wolfgang Jantsch

Pages:

289-294

DOI:

10.4028/www.scientific.net/MSF.143-147.289

Citation:

A.C. Irvine et al., "Direct Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al0.22Ga0.78As", Materials Science Forum, Vols. 143-147, pp. 289-294, 1994

Online since:

October 1993

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$35.00

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