Paper Titles

Si Acceptors and their Passivation by Hydrogen in p-Type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAs
p.265

The Lattice Location and Electrical Activity of Ion-Implanted Sn in InP
p.271

Nitrogen-Hydrogen Complexes in GaP and GaAs
p.277

Recombination and Optical Excitation Properties of the Ga-O-Ga Center in Gallium Arsenide
p.283

Direct Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al_0.22Ga_0.78As
p.289

Defects in Electron Irradiated GaP and GaInP
p.295

Positron Lifetime Investigations of Electron Irradiated InP
p.299

Study of Indium Implanted GaAs: Positron Annihilation and Electrical Measurements
p.305

Fine Structure of the (Fe²⁺, h) Bound States in GaP and InP
p.311

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Direct Evidence for Gallium Defect Annealing Near...

Direct Evidence for Gallium Defect Annealing Near 280K in N-GaAs and N-Al_0.22Ga_0.78As

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 17

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

289-294

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.289

Citation:

Cite this paper

Online since:

October 1993

Authors:

A.C. Irvine, D.W. Palmer, J.S. Roberts

Keywords:

AlGaAs, Annealing, Antisite, GaAs, Irradiation, Vacancy

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: