Paper Titles

Interaction of Atomic Hydrogen with Arsenic Antisites and Arsenic Interstitials in Gallium Arsenide
p.235

Incorporation of Be Into In_x Ga_1-x As (0.004≤x≤0.17) Studied by Photoluminescence and Resonant Raman Spectroscopy of Local Vibrational Modes
p.241

Infrared and Raman Studies of Carbon Impurities in Highly Doped MBE AlAs:C
p.247

Theory of Carbon Complexes in Gallium Arsenide and Aluminium Arsenide
p.253

Incorporation of Silicon in (311)A and (111)A GaAs Grown by Molecular Beam Epitaxy
p.259

Si Acceptors and their Passivation by Hydrogen in p-Type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAs
p.265

The Lattice Location and Electrical Activity of Ion-Implanted Sn in InP
p.271

Nitrogen-Hydrogen Complexes in GaP and GaAs
p.277

Recombination and Optical Excitation Properties of the Ga-O-Ga Center in Gallium Arsenide
p.283

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Incorporation of Silicon in (311)A and (111)A GaAs...

Incorporation of Silicon in (311)A and (111)A GaAs Grown by Molecular Beam Epitaxy

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

259-264

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.259

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Online since:

October 1993

Authors:

J. Wagner, M. Ramsteiner, M.J. Ashwin, M.R. Fahy, R.C. Newman, W. Braun, K. Ploog

Keywords:

FTIR LVM Spectroscopy, LVM Raman Spectroscopy, Si-Doped MBE GaAs

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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