On the Microscopic Structures of Three Different Arsenic Antisite-Related Defects in Gallium Arsenide Studied by Optically Detected Electron Nuclear Double Resonance
p.217
p.217
The Electron Irradiation Induced Defect E1,E2 in GaAs: Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model
p.223
p.223
The Assignment of the 78/203meV Double Acceptor in GaAs to BAs Impurity Antisite Centers
p.229
p.229
Interaction of Atomic Hydrogen with Arsenic Antisites and Arsenic Interstitials in Gallium Arsenide
p.235
p.235
Incorporation of Be Into Inx Ga1-x As (0.004≤x≤0.17) Studied by Photoluminescence and Resonant Raman Spectroscopy of Local Vibrational Modes
p.241
p.241
Infrared and Raman Studies of Carbon Impurities in Highly Doped MBE AlAs:C
p.247
p.247
Theory of Carbon Complexes in Gallium Arsenide and Aluminium Arsenide
p.253
p.253
Incorporation of Silicon in (311)A and (111)A GaAs Grown by Molecular Beam Epitaxy
p.259
p.259
Si Acceptors and their Passivation by Hydrogen in p-Type Liquid Phase Epitaxial and Molecular Beam Epitaxial GaAs
p.265
p.265
Incorporation of Be Into Inx Ga1-x As (0.004≤x≤0.17) Studied by Photoluminescence and Resonant Raman Spectroscopy of Local Vibrational Modes
Abstract:
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Periodical:
Materials Science Forum (Volumes 143-147)
Pages:
241-246
Citation:
Online since:
October 1993
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Сopyright:
© 1994 Trans Tech Publications Ltd. All Rights Reserved
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