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HomeMaterials Science ForumMaterials Science Forum Vols. 143-147The Electron Irradiation Induced Defect E1,E2 in...

The Electron Irradiation Induced Defect E1,E2 in GaAs: Arsenic Frenkel Pair Versus Displaced Arsenic Antisite Model

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Defects in Semiconductors 17

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Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

223-228

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.223

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Online since:

October 1993

Authors:

Hans Jürgen von Bardeleben, Christian Delerue, Didier Stiévenard

Keywords:

Antisite, Electron Paramagnetic Resonance (EPR), GaAs, Vacancy

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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