Paper Titles

Electronic Structure of Copper-Related Defects in Germanium
p.779

Thermodynamic Properties of Self-Interstitials in Silicon: An Experimental Investigation
p.785

Shallow Bound Pseudoacceptor States of Iron in Gallium Phosphide
p.791

An Optical Zeeman Study on Fe³⁺ in GaAs and InP
p.797

Unusual Diffusion and Precipitation Behavior of Ni and Cu in Si upon Elevated-Temperature Ion Implantation
p.803

Electrical and Optical Properties of 3D- and 4D-Transition Metal Related Centers in Silicon
p.809

Nonlinear Zeeman Splitting and Electron-Phonon Coupling
p.815

Hydrogen-Gold-Related Deep Levels in Crystalline Silicon
p.821

In Search of Co-Acceptor Pairs in Highly Doped p-Si: A Mössbauer Spectroscopy Study
p.827

HomeMaterials Science ForumMaterials Science Forum Vols. 143-147Unusual Diffusion and Precipitation Behavior of Ni...

Unusual Diffusion and Precipitation Behavior of Ni and Cu in Si upon Elevated-Temperature Ion Implantation

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 17

Info:

Periodical:

Materials Science Forum (Volumes 143-147)

Pages:

803-808

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.143-147.803

Citation:

Cite this paper

Online since:

October 1993

Authors:

G. Langouche, M.F. Wu, J. De Wachter, H. Pattyn, A.-M. Van Bavel

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: