Paper Titles

Auger Line Shape of M_2,3VV Measured with Positron Annihilation Induced Auger Electron Spectroscopy
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Apparatus for High Resolution Positron Annihilation Induced Auger Electron Spectroscopy
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Light Impurities in Metals
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Positron and Positronium in Free Volume in Oxides: Silica Glass and Neutron-Irradiated Alumina
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Electronic Structure and Positron Trapping in Semiconductors
p.279

Fractal Studies on the Positron Annihilation in Metals
p.287

Thermal Vacancy Formation in Ni₃Al and γ-TiAl Compounds Studied by Positron Lifetime and Nearest-Neighbour Bond Models
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Solid-State Amorphization in the Ni-Zr System Investigated by Positron Lifetime Spectroscopy
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Progress in the Study of Defects in Reactor Steels
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HomeMaterials Science ForumMaterials Science Forum Vols. 175-178Electronic Structure and Positron Trapping in...

Electronic Structure and Positron Trapping in Semiconductors

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Periodical:

Materials Science Forum (Volumes 175-178)

Pages:

279-286

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.175-178.279

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Online since:

November 1994

Authors:

Risto M. Nieminen

Keywords:

Deep Level, GaAs, InP, Ionisation Levels, Metastable Defects, Paramagnetic Defects, Positron Defect Trapping, Relaxation, Two Component Density Functional Theory, Vacancies in Si

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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