Paper Titles

Changes of Structural Defects of Hydrogenated and Dehydrogenated α-Ti Investigated by Positron Annihilation Technique
p.411

Structure Characteristics of Ferrocene-Potassium Ferricyanide Charge-Transfer Salt Investigated by Positron Lifetime Spectroscopy
p.415

Positron Annihilation Lifetime Study of Irradiated Fe-Mo and Fe-Si Alloys
p.419

Annealing Processes of Vacancies in Silicon Induced by Electron Irradiation: Analysis Using Positron Lifetime Measurement
p.423

Experimental Determination of the Specific Positron Trapping Rates in Semiconductors
p.427

Positron Annihilation in Quasicrystals
p.431

Defects in Hyperpure Fe-Based Alloys Created by 3MeV eˉ -Irradiation
p.435

Studies on Compatibility of PS/PPSQ in Situ Blend by Positron Annihilation Spectroscopy (PAS)
p.439

The Investigation of High Temperature Substeady Creep in Pure Aluminium by Positron Annihilation
p.443

HomeMaterials Science ForumMaterials Science Forum Vols. 175-178Experimental Determination of the Specific...

Experimental Determination of the Specific Positron Trapping Rates in Semiconductors

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Periodical:

Materials Science Forum (Volumes 175-178)

Pages:

427-430

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.175-178.427

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Online since:

November 1994

Authors:

Reinhard Krause-Rehberg, A. Polity, Th. Abgarjan

Keywords:

Dislocation, Semiconductor, Specific Positron Trapping Rates, Vacancy

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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