Annealing Processes of Vacancies in Silicon Induced by Electron Irradiation: Analysis Using Positron Lifetime Measurement

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Periodical:

Materials Science Forum (Volumes 175-178)

Edited by:

Yuan-Jin He, Bi-Song Cao and Y.C. Jean

Pages:

423-426

Citation:

A. Kawasuso et al., "Annealing Processes of Vacancies in Silicon Induced by Electron Irradiation: Analysis Using Positron Lifetime Measurement", Materials Science Forum, Vols. 175-178, pp. 423-426, 1995

Online since:

November 1994

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$38.00

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