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HomeMaterials Science ForumMaterials Science Forum Vols. 175-178Positron Mobility and Interface Defect Studies in...

Positron Mobility and Interface Defect Studies in Semi-Insulating GaAs Using the Lifetime Technique

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Periodical:

Materials Science Forum (Volumes 175-178)

Pages:

517-520

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.175-178.517

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Online since:

November 1994

Authors:

Y.Y. Shan, C.C. Ling, H.L. Au, S. Fung, C.D. Beling, Y.Y. Wang

Keywords:

Interface, Lifetime, Microvoid, Mobility

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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