Vacancy Defects in GaAs and AlGaAs Studied by Positron Spectroscopy under Photoexcitation

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Periodical:

Materials Science Forum (Volumes 175-178)

Edited by:

Yuan-Jin He, Bi-Song Cao and Y.C. Jean

Pages:

501-504

Citation:

K. Saarinen et al., "Vacancy Defects in GaAs and AlGaAs Studied by Positron Spectroscopy under Photoexcitation", Materials Science Forum, Vols. 175-178, pp. 501-504, 1995

Online since:

November 1994

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$38.00

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