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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201New Bistable Oxygen-Related Complex in Silicon

New Bistable Oxygen-Related Complex in Silicon

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1007-1012

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1007

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Online since:

November 1995

Authors:

Kh.A. Abdullin, B.N. Mukashev, Yu.V. Gorelkinskii

Keywords:

Bistability, EPR, Interstitial, Oxygen, Radiation Defect, Silicon

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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