Nonradiative Investigations of Photoquenching and Recovery of EL2 Defect Levels in Si-GaAs

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

1031-1036

DOI:

10.4028/www.scientific.net/MSF.196-201.1031

Citation:

A. Fukayama et al., "Nonradiative Investigations of Photoquenching and Recovery of EL2 Defect Levels in Si-GaAs", Materials Science Forum, Vols. 196-201, pp. 1031-1036, 1995

Online since:

November 1995

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$35.00

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