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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Nonradiative Investigations of Photoquenching and...

Nonradiative Investigations of Photoquenching and Recovery of EL2 Defect Levels in Si-GaAs

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1031-1036

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1031

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Online since:

November 1995

Authors:

A. Fukayama, Tetsuo Ikari, Y. Akashi, Kengo Futagami

Keywords:

EL2, Enhancement of the PA Signal, GaAs, Photoacoustic Spectroscopy, Photoquenching

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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