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Nonradiative Investigations of Photoquenching and Recovery of EL2 Defect Levels in Si-GaAs
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The Role of a 70-80 me V Acceptor in the Photoquenching of EL'
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Metastable Photogenerated Effects in Low Resistivity GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201The Role of a 70-80 me V Acceptor in the...

The Role of a 70-80 me V Acceptor in the Photoquenching of EL'

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1037-1042

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1037

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Online since:

November 1995

Authors:

M. Suemitsu, H. Takahashi, Y. Sagae, N. Miyamoto

Keywords:

EL2, GaAs, NIR, Photoquenching, TSC

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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