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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Introduction of Metastable Vacancy Defects in...

Introduction of Metastable Vacancy Defects in Electron Irradiated Semi-Insulating GaAs

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1055-1060

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1055

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Online since:

November 1995

Authors:

Kimmo Saarinen, S. Kuisma, J. Mäkinen, Pekka J. Hautojärvi, M. Törnqvist, C. Corbel

Keywords:

As Antisite, El2 Defect, Electron Irradiation, GaAs, Metastability, Vacancy

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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