Holes Induced by Strong Near Band Gap Light in GaAs:O. EL2 Related?
p.1043
p.1043
Metastable Photogenerated Effects in Low Resistivity GaAs
p.1049
p.1049
Introduction of Metastable Vacancy Defects in Electron Irradiated Semi-Insulating GaAs
p.1055
p.1055
Arsenic Antisite-Arsenic Vacancy Complex and Gallium Vacancy in GaAs: A Kind of Bistability Pair of Intrinsic Defects?
p.1061
p.1061
Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAs
p.1067
p.1067
Local Structure of the DX Center in AlGaAs: Results from Positron Spectroscopy
p.1073
p.1073
Direct Experimental Evidence of Autolocalization Nature of DX-Centers
p.1079
p.1079
Magneto-Optical and EPR Investigation of Ionized DX Centers in Te-Doped AlxGa1-xAs
p.1085
p.1085
Silicon-Related Local Vibrational Mode Absorption in Bulk AlGaAs
p.1091
p.1091
Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAs
Abstract:
Info:
Periodical:
Materials Science Forum (Volumes 196-201)
Main Theme:
Edited by:
M. Suezawa and H. Katayama-Yoshida
Pages:
1067-1072
Citation:
F. Danie Auret et al., "Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAs", Materials Science Forum, Vols. 196-201, pp. 1067-1072, 1995
Online since:
November 1995
Authors:
Price:
$38.00
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