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Introduction of Metastable Vacancy Defects in Electron Irradiated Semi-Insulating GaAs
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Arsenic Antisite-Arsenic Vacancy Complex and Gallium Vacancy in GaAs: A Kind of Bistability Pair of Intrinsic Defects?
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Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAs
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Local Structure of the DX Center in AlGaAs: Results from Positron Spectroscopy
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Direct Experimental Evidence of Autolocalization Nature of DX-Centers
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Magneto-Optical and EPR Investigation of Ionized DX Centers in Te-Doped Al_xGa_1-xAs
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Silicon-Related Local Vibrational Mode Absorption in Bulk AlGaAs
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HomeMaterials Science ForumDefects in Semiconductors 18Electronic Properties and Introduction Kinetics of...

Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAs

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Periodical:

Materials Science Forum (Volumes 196-201)

Main Theme:

Defects in Semiconductors 18

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

1067-1072

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1067

Citation:

F. Danie Auret et al., "Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAs", Materials Science Forum, Vols. 196-201, pp. 1067-1072, 1995

Online since:

November 1995

Authors:

F. Danie Auret, S.A. Goodman, W.E. Meyer

Keywords:

Deep Level Transient Spectroscopy, Electronic Properties, Introduction Kinetics, Metastable Defects, Radiation Induced Defects

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