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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Electronic Properties and Introduction Kinetics of...

Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAs

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1067-1072

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1067

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Online since:

November 1995

Authors:

F. Danie Auret, S.A. Goodman, W.E. Meyer

Keywords:

Deep Level Transient Spectroscopy, Electronic Properties, Introduction Kinetics, Metastable Defects, Radiation Induced Defects

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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