Paper Titles

Arsenic Antisite-Arsenic Vacancy Complex and Gallium Vacancy in GaAs: A Kind of Bistability Pair of Intrinsic Defects?
p.1061

Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAs
p.1067

Local Structure of the DX Center in AlGaAs: Results from Positron Spectroscopy
p.1073

Direct Experimental Evidence of Autolocalization Nature of DX-Centers
p.1079

Magneto-Optical and EPR Investigation of Ionized DX Centers in Te-Doped Al_xGa_1-xAs
p.1085

Silicon-Related Local Vibrational Mode Absorption in Bulk AlGaAs
p.1091

A Bistable Defect in Si-Doped Al_0.3Ga_0.7As
p.1097

Use of Bistable Centers in CdF₂ in Holographic Recording
p.1103

Structural Study of Degraded II-VI Blue-Light Emitters
p.1109

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Magneto-Optical and EPR Investigation of Ionized...

Magneto-Optical and EPR Investigation of Ionized DX Centers in Te-Doped Al_xGa_1-xAs

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 18

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1085-1090

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1085

Citation:

Cite this paper

Online since:

November 1995

Authors:

M.V.B. Pinheiro, Matthias Linde, Hiroshi Ohkura, Johann Martin Spaeth

Keywords:

AlGaAs, DX Centers, Negative-U Defects, Optically Detected EPR

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: