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HomeMaterials Science ForumDefects in Semiconductors 18Magneto-Optical and EPR Investigation of Ionized...

Magneto-Optical and EPR Investigation of Ionized DX Centers in Te-Doped Al_xGa_1-xAs

Abstract:

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Periodical:

Materials Science Forum (Volumes 196-201)

Main Theme:

Defects in Semiconductors 18

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

1085-1090

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1085

Citation:

M.V.B. Pinheiro et al., "Magneto-Optical and EPR Investigation of Ionized DX Centers in Te-Doped Al_xGa_1-xAs", Materials Science Forum, Vols. 196-201, pp. 1085-1090, 1995

Online since:

November 1995

Authors:

M.V.B. Pinheiro, Matthias Linde, Hiroshi Ohkura, Johann Martin Spaeth

Keywords:

AlGaAs, DX Centers, Negative-U Defects, Optically Detected EPR

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