Arsenic Antisite-Arsenic Vacancy Complex and Gallium Vacancy in GaAs: A Kind of Bistability Pair of Intrinsic Defects?
p.1061
p.1061
Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAs
p.1067
p.1067
Local Structure of the DX Center in AlGaAs: Results from Positron Spectroscopy
p.1073
p.1073
Direct Experimental Evidence of Autolocalization Nature of DX-Centers
p.1079
p.1079
Magneto-Optical and EPR Investigation of Ionized DX Centers in Te-Doped AlxGa1-xAs
p.1085
p.1085
Silicon-Related Local Vibrational Mode Absorption in Bulk AlGaAs
p.1091
p.1091
A Bistable Defect in Si-Doped Al0.3Ga0.7As
p.1097
p.1097
Use of Bistable Centers in CdF2 in Holographic Recording
p.1103
p.1103
Structural Study of Degraded II-VI Blue-Light Emitters
p.1109
p.1109
Magneto-Optical and EPR Investigation of Ionized DX Centers in Te-Doped AlxGa1-xAs
Abstract:
Info:
Periodical:
Materials Science Forum (Volumes 196-201)
Main Theme:
Edited by:
M. Suezawa and H. Katayama-Yoshida
Pages:
1085-1090
Citation:
M.V.B. Pinheiro et al., "Magneto-Optical and EPR Investigation of Ionized DX Centers in Te-Doped AlxGa1-xAs", Materials Science Forum, Vols. 196-201, pp. 1085-1090, 1995
Online since:
November 1995
Keywords:
Price:
$38.00
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