A Bistable Defect in Si-Doped Al0.3Ga0.7As

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

1097-1102

DOI:

10.4028/www.scientific.net/MSF.196-201.1097

Citation:

M.M. Sobolev et al., "A Bistable Defect in Si-Doped Al0.3Ga0.7As", Materials Science Forum, Vols. 196-201, pp. 1097-1102, 1995

Online since:

November 1995

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$38.00

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