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Direct Experimental Evidence of Autolocalization Nature of DX-Centers
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Magneto-Optical and EPR Investigation of Ionized DX Centers in Te-Doped Al_xGa_1-xAs
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Silicon-Related Local Vibrational Mode Absorption in Bulk AlGaAs
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A Bistable Defect in Si-Doped Al_0.3Ga_0.7As
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Use of Bistable Centers in CdF₂ in Holographic Recording
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Structural Study of Degraded II-VI Blue-Light Emitters
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Evidence for High Vacancy Concentrations in Heavily Doped N-Type Silicon from Mossbauer Experiments
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Analysis of the Recombination-Active Region Around Extended Defects in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201A Bistable Defect in Si-Doped Al0.3Ga0.7As

A Bistable Defect in Si-Doped Al_0.3Ga_0.7As

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1097-1102

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1097

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Online since:

November 1995

Authors:

M.M. Sobolev, I.V. Kochnev, M.I. Papentsev, V.S. Kalinovsky

Keywords:

Bistable Defects, Electron Irradiation

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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