Paper Titles

A Bistable Defect in Si-Doped Al_0.3Ga_0.7As
p.1097

Use of Bistable Centers in CdF₂ in Holographic Recording
p.1103

Structural Study of Degraded II-VI Blue-Light Emitters
p.1109

Evidence for High Vacancy Concentrations in Heavily Doped N-Type Silicon from Mossbauer Experiments
p.1117

Analysis of the Recombination-Active Region Around Extended Defects in Silicon
p.1123

Photoluminescence of Ring-Distribution of Oxygen Precipitates in Czochralski Silicon
p.1129

Positron Lifetime in Si Multivacancies
p.1135

Frenkel Defects in Low Temperature e^-- Irradiated Ge and Si Investigated by X-Ray Diffraction
p.1141

On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C.
p.1147

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Analysis of the Recombination-Active Region Around...

Analysis of the Recombination-Active Region Around Extended Defects in Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 18

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1123-1128

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1123

Citation:

Cite this paper

Online since:

November 1995

Authors:

Martin Kittler, Winfried Seifert

Keywords:

Dislocation, NiSi₂ Precipitates, Recombination, Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: