Paper Titles

Direct Experimental Evidence of Autolocalization Nature of DX-Centers
p.1079

Magneto-Optical and EPR Investigation of Ionized DX Centers in Te-Doped Al_xGa_1-xAs
p.1085

Silicon-Related Local Vibrational Mode Absorption in Bulk AlGaAs
p.1091

A Bistable Defect in Si-Doped Al_0.3Ga_0.7As
p.1097

Use of Bistable Centers in CdF₂ in Holographic Recording
p.1103

Structural Study of Degraded II-VI Blue-Light Emitters
p.1109

Evidence for High Vacancy Concentrations in Heavily Doped N-Type Silicon from Mossbauer Experiments
p.1117

Analysis of the Recombination-Active Region Around Extended Defects in Silicon
p.1123

Photoluminescence of Ring-Distribution of Oxygen Precipitates in Czochralski Silicon
p.1129

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Use of Bistable Centers in CdF2 in Holographic...

Use of Bistable Centers in CdF₂ in Holographic Recording

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 18

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1103-1108

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1103

Citation:

Cite this paper

Online since:

November 1995

Authors:

B. Koziarska, Jerzy M. Langer, Alexandr I. Ryskin, A.S. Shcheulin, A. Suchocki

Keywords:

Bistable Centers, CdF₂:Ga, CdF₂:In, DX Centers, Holography

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: