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Evidence for High Vacancy Concentrations in Heavily Doped N-Type Silicon from Mossbauer Experiments
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Home Materials Science Forum Defects in Semiconductors 18Use of Bistable Centers in CdF2 in Holographic...

Use of Bistable Centers in CdF₂ in Holographic Recording

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Periodical:

Materials Science Forum (Volumes 196-201)

Main Theme:

Defects in Semiconductors 18

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

1103-1108

DOI:

10.4028/www.scientific.net/MSF.196-201.1103

Citation:

B. Koziarska et al., "Use of Bistable Centers in CdF₂ in Holographic Recording", Materials Science Forum, Vols. 196-201, pp. 1103-1108, 1995

Online since:

November 1995

Authors:

B. Koziarska, Jerzy M. Langer, Alexandr I. Ryskin, A.S. Shcheulin, A. Suchocki

Keywords:

Bistable Centers, CdF₂:Ga, CdF₂:In, DX Centers, Holography

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