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Nonradiative Investigations of Photoquenching and Recovery of EL2 Defect Levels in Si-GaAs
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The Role of a 70-80 me V Acceptor in the Photoquenching of EL'
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Holes Induced by Strong Near Band Gap Light in GaAs:O. EL2 Related?
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Metastable Photogenerated Effects in Low Resistivity GaAs
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Introduction of Metastable Vacancy Defects in Electron Irradiated Semi-Insulating GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Holes Induced by Strong Near Band Gap Light in...

Holes Induced by Strong Near Band Gap Light in GaAs:O. EL2 Related?

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

1043-1048

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.1043

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Online since:

November 1995

Authors:

W.V.M. Machado, M.A. Amato, A.F.S. Landim, B.K. Ridley

Keywords:

Gallium Arsenide, Holes, Metastable State, Photocurrent

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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