Paper Titles

Theory of Si δ-Doped GaAs
p.415

Metastability and Electronic Structure of Periodically n-Type and p-Type δ-Doped Layer in GaAs
p.421

Infrared and Raman Studies of Si Delta-Doped (100) GaAs Grown by MBE at 400°C on c(4x4) Surfaces
p.425

Saturation of Luminescence Quenching Due to Nonradiative Centers in a GaAs/AlGaAs Quantum Well
p.431

Defect Induced Electron Transport Trough Semiconductor Barriers
p.437

Correlated Charged Donors in GaAs/AlGaAs Quantum Well. Quantum- and Mobility-Scattering Times
p.443

Non-Radiative Recombination in Irradiated GaAs/AlGaAs Multiple Quantum Wells
p.449

Defect Related Recombination Processes in II-VI Quantum Wells
p.455

Magnetoelectronic States in Semiconductor / Antiferromagnet Superlattices
p.461

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Defect Induced Electron Transport Trough...

Defect Induced Electron Transport Trough Semiconductor Barriers

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

437-442

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.437

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Online since:

November 1995

Authors:

J.C. Bourgoin, Lassad El Mir

Keywords:

DX Centers, GaAlAs, Tunnel Transport

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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