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HomeMaterials Science ForumMaterials Science Forum Vols. 196-201Infrared and Raman Studies of Si Delta-Doped (100)...

Infrared and Raman Studies of Si Delta-Doped (100) GaAs Grown by MBE at 400°C on c(4x4) Surfaces

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Defects in Semiconductors 18

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Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

425-430

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.425

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Online since:

November 1995

Authors:

R.C. Newman, M.J. Ashwin, M.R. Fahy, L. Hart, S.N. Holmes, C. Roberts, J. Wagner

Keywords:

GaAs, Infrared, LVM, RAMAN, Si Impurity, δ-Doping

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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