Infrared and Raman Studies of Si Delta-Doped (100) GaAs Grown by MBE at 400°C on c(4x4) Surfaces

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

425-430

DOI:

10.4028/www.scientific.net/MSF.196-201.425

Citation:

R.C. Newman et al., "Infrared and Raman Studies of Si Delta-Doped (100) GaAs Grown by MBE at 400°C on c(4x4) Surfaces", Materials Science Forum, Vols. 196-201, pp. 425-430, 1995

Online since:

November 1995

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