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HomeMaterials Science ForumMaterials Science Forum Vols. 207-209Study of Doped-Intrinsic Interfaces in Amorphous...

Study of Doped-Intrinsic Interfaces in Amorphous Semiconductors Using Doping Multilayers

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Intergranular and Interphase Boundaries in Materials II

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Periodical:

Materials Science Forum (Volumes 207-209)

Pages:

589-592

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.207-209.589

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Online since:

February 1996

Authors:

João Pedro Conde, Marcia Silva, V. Chu

Keywords:

Amorphous Doping Multilayers, Amorphous Silicon, Constant Photocurrent Method, Interface Defect Densities, Photoconductivity

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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