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HomeMaterials Science ForumMaterials Science Forum Vols. 239-241In Situ Study of the Accumulation of...

In Situ Study of the Accumulation of Ion-Beam-Induced Damage in Single Crystal 3C Silicon Carbide

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Defects in Insulating Materials

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Periodical:

Materials Science Forum (Volumes 239-241)

Pages:

155-158

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.239-241.155

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Online since:

January 1997

Authors:

William J. Weber, N. Yu

Keywords:

Amorphisation, In Situ Rutherford Backscattering/Channeling, Ion-Beam Damage, Silicon Carbide (SiC)

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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