Paper Titles

Buried SiO₂ Films: Interfaces and Defects
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Generation and Annealing Kinetics of Oxygen Vacancy and Oxygen Excess Centers in Thin Film SiO₂
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Theoretical Exploration of ²⁹Si Hyperfine and Superhyperfine Parameters of E' Centers as a Measure of Range-II Order in a-SiO₂
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Further Study of the Distribution of the Tunneling States in Neutron Irradiated Quartz
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Visible/Infra-Red Absorption Study in Fiber Geometry of Metastable Defect States in High-Purity Fused Silicas
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Laser-Induced Luminescence in Glassy SiO₂ and Neutron-Irradiated Alpha-Quartz: Three Types of Non-Bridging Oxygen Hole Centers
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Defects in Quartz Related to Li Ions
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Theory of Impurity Interactions in Silicon Dioxide
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HomeMaterials Science ForumMaterials Science Forum Vols. 239-241Generation and Annealing Kinetics of Oxygen...

Generation and Annealing Kinetics of Oxygen Vacancy and Oxygen Excess Centers in Thin Film SiO₂

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Defects in Insulating Materials

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Periodical:

Materials Science Forum (Volumes 239-241)

Pages:

7-10

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.239-241.7

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Online since:

January 1997

Authors:

Mary Ellen Zvanut, T.L. Chen

Keywords:

Dry Heat-Treatment, EX, E_δ, Impurity, Point Defect, SiO₂/Si

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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