Generation and Annealing Kinetics of Oxygen Vacancy and Oxygen Excess Centers in Thin Film SiO2

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Periodical:

Materials Science Forum (Volumes 239-241)

Edited by:

G.E. Matthews and R.T. Williams

Pages:

7-10

DOI:

10.4028/www.scientific.net/MSF.239-241.7

Citation:

M. E. Zvanut and T.L. Chen, "Generation and Annealing Kinetics of Oxygen Vacancy and Oxygen Excess Centers in Thin Film SiO2", Materials Science Forum, Vols. 239-241, pp. 7-10, 1997

Online since:

January 1997

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$35.00

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