Paper Titles

Buried SiO₂ Films: Interfaces and Defects
p.1

Generation and Annealing Kinetics of Oxygen Vacancy and Oxygen Excess Centers in Thin Film SiO₂
p.7

Theoretical Exploration of ²⁹Si Hyperfine and Superhyperfine Parameters of E' Centers as a Measure of Range-II Order in a-SiO₂
p.11

Further Study of the Distribution of the Tunneling States in Neutron Irradiated Quartz
p.15

Visible/Infra-Red Absorption Study in Fiber Geometry of Metastable Defect States in High-Purity Fused Silicas
p.19

Laser-Induced Luminescence in Glassy SiO₂ and Neutron-Irradiated Alpha-Quartz: Three Types of Non-Bridging Oxygen Hole Centers
p.25

Defects in Quartz Related to Li Ions
p.29

Theory of Impurity Interactions in Silicon Dioxide
p.33

HomeMaterials Science ForumMaterials Science Forum Vols. 239-241Buried SiO2 Films: Interfaces and Defects

Buried SiO₂ Films: Interfaces and Defects

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Defects in Insulating Materials

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Periodical:

Materials Science Forum (Volumes 239-241)

Pages:

1-6

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.239-241.1

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Online since:

January 1997

Authors:

Andre Stesmans

Keywords:

Buried Oxide, Electron Spin Resonance, Point Defect, Silicon Oxide (SiO), Silicon-on-Insulator (SOI)

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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