Modeling of Ion Implantation and Diffusion in Si

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Periodical:

Materials Science Forum (Volumes 248-249)

Edited by:

A.G. Balogh and G. Walter

Pages:

41-48

DOI:

10.4028/www.scientific.net/MSF.248-249.41

Citation:

M.-J. Caturla et al., "Modeling of Ion Implantation and Diffusion in Si", Materials Science Forum, Vols. 248-249, pp. 41-48, 1997

Online since:

May 1997

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$35.00

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