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HomeMaterials Science ForumMaterials Science Forum Vols. 248-249Modeling of Ion Implantation and Diffusion in Si

Modeling of Ion Implantation and Diffusion in Si

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Materials Science Applications of Ion Beam Techniques

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Periodical:

Materials Science Forum (Volumes 248-249)

Pages:

41-48

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.248-249.41

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Online since:

May 1997

Authors:

M.-J. Caturla, T. Diaz de la Rubia, P.J. Bedrossian

Keywords:

Diffusion, Ion Implantation, Molecular Dynamic (MD), Monte-Carlo

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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