Paper Titles

Modeling of Ion Implantation and Diffusion in Si
p.41

Crystal-Grid Investigation of Atomic Collision Cascades in Ionic Compounds
p.49

Thermal Spike Description of the Damage Creation in Y₃Al₅O₁₂ Induced by Swift Heavy Ions
p.53

Track Formation in Metals under Swift Heavy Ion Bombardment
p.57

Diffusion in Ion Irradiated Nickel: Determination of Atomic Mixing, Sink Strength and Fraction of Freely Migrating Defects
p.61

Ion-Beam Modification of Semiconductors and Related Electronic Materials
p.67

Ion Beam Induced Epitaxial Crystallization of Buried SiC Layers in Silicon
p.73

Ion Beam Induced Epitaxial Regrowth and Interfacial Amorphization of Compound Semiconductors
p.79

Effects of Ion Irradiation on Ferromagnetic Thin Films
p.87

HomeMaterials Science ForumMaterials Science Forum Vols. 248-249Diffusion in Ion Irradiated Nickel: Determination...

Diffusion in Ion Irradiated Nickel: Determination of Atomic Mixing, Sink Strength and Fraction of Freely Migrating Defects

Article Preview

Abstract:

You might also be interested in these eBooks

Materials Science Applications of Ion Beam Techniques

Info:

Periodical:

Materials Science Forum (Volumes 248-249)

Pages:

61-66

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.248-249.61

Citation:

Cite this paper

Online since:

May 1997

Authors:

P. Fielitz, M.P. Macht, Volkmar Naundorf, H. Wollenberger

Keywords:

Atomic Mixing, Effective Sink Strength, Freely Migrating Defects, Ion Irradiation, Radiation-Enhanced Diffusion

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: