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HomeMaterials Science ForumMaterials Science Forum Vols. 248-249Ion Beam Induced Epitaxial Regrowth and...

Ion Beam Induced Epitaxial Regrowth and Interfacial Amorphization of Compound Semiconductors

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Materials Science Applications of Ion Beam Techniques

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Periodical:

Materials Science Forum (Volumes 248-249)

Pages:

79-86

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.248-249.79

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Online since:

May 1997

Authors:

E. Glaser, T. Fehlhaber, Robert Schulz, T. Bachmann

Keywords:

Amorphisation, Epitaxial Regrowth, Ion Beam Induced Crystallization, Ion Implantation

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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