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HomeMaterials Science ForumMaterials Science Forum Vols. 255-257Positron Mobility in Semi-Insulating 4H-SiC

Positron Mobility in Semi-Insulating 4H-SiC

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Periodical:

Materials Science Forum (Volumes 255-257)

Pages:

260-262

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.255-257.260

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Online since:

September 1997

Authors:

C.D. Beling, S. Fung, S.H. Cheung, M. Gong, C.C. Ling, Y.F. Hu, Gerhard Brauer

Keywords:

4H-SiC, Field Assisted Moderator, Positron Mobility, Semi-insulating (SI)

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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