Positron Mobility in Semi-Insulating 4H-SiC

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Periodical:

Materials Science Forum (Volumes 255-257)

Edited by:

Y. C. Jean, Morten Eldrup, David M. Schrader, Roy N. West

Pages:

260-262

DOI:

10.4028/www.scientific.net/MSF.255-257.260

Citation:

C.D. Beling et al., "Positron Mobility in Semi-Insulating 4H-SiC", Materials Science Forum, Vols. 255-257, pp. 260-262, 1997

Online since:

September 1997

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Price:

$35.00

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