Paper Titles

Acknowledgements

Recent Measurements and Theory Relating to Impurity-Induced LVMS in GaP and GaAs
p.1

Optically-Induced Defects in Si-H Nanoparticles
p.11

Defects and Doping in III-V Nitrides
p.19

A Programme for the Future?
p.27

The Hydrogen-Saturated Self-Interstitial in Silicon and Germanium
p.35

Matrix-Induced Isotope Shift of a Vibrational Mode of Interstitial Oxygen in Germanium
p.41

Isotopic Shifts of the Rotational States of Interstitial Oxygen in Germanium
p.47

DLTS Combined with Perturbed Angular Correlation (PAC) on Radioactive ¹¹¹In Atoms in Ge
p.53

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Recent Measurements and Theory Relating to...

Recent Measurements and Theory Relating to Impurity-Induced LVMS in GaP and GaAs

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1-10

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1

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Online since:

December 1997

Authors:

R.C. Newman, E.G. Grosche, M.J. Ashwin, B.R. Davidson, D.A. Robbie, R.S. Leigh, M.J.L. Sangster

Keywords:

Force Constants, GaAs, GaP, Gap Modes, Impurity, Line Widths, LVMs

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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