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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263N-Vacancy Defects in c-BN and w-BN

N-Vacancy Defects in c-BN and w-BN

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1275-1280

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1275

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Online since:

December 1997

Authors:

R. Mota, P. Piquini, V. Torres, A. Fazzio

Keywords:

BN, Electronic Structure, N-Vacancy

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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