Paper Titles

N-Vacancy Defects in c-BN and w-BN
p.1275

Multiphonon-Assisted Tunnel Ionisation of Deep Impurities in High-Frequency Electric Field
p.1281

Long-Range Lattice Relaxation for Donor Centers in Supercell Method
p.1287

Decay Kinetics of Growth-Induced Alignment of the First Neighbor Shell of C_As in Al_xGa_1-xAs
p.1293

Plausible Evidence of Existence of Deep Acceptors in Si δ-Doped AlGaAs
p.1299

Magneto-Optical and Magnetic Resonance Investigations of Intrinsic Defects in Electron-Irradiated n-Type Al_xGa_1-xAs
p.1303

Gallium Interstitials in GaAs/AlGaAs Heterostructures Investigated by Optically and Electrically Detected Magnetic Resonance
p.1309

ODMR Investigations of Ge Acceptors in p-Type Al_0.4Ga_0.6As
p.1315

Inverted Charge States of Anion and Cation-Site Vacancies in Zinc Blende Semiconductors:Theory
p.1321

HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Plausible Evidence of Existence of Deep Acceptors...

Plausible Evidence of Existence of Deep Acceptors in Si δ-Doped AlGaAs

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 19

Info:

Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1299-1302

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1299

Citation:

Cite this paper

Online since:

December 1997

Authors:

K. Takarabe, N. Okada, K. Ohmura, Hiroshi Ohkura

Keywords:

Deep Acceptors, Photoluminescence (PL), Si δ-Doped AlGaAs

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1997 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: