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Plausible Evidence of Existence of Deep Acceptors in Si δ-Doped AlGaAs
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Magneto-Optical and Magnetic Resonance Investigations of Intrinsic Defects in Electron-Irradiated n-Type Al_xGa_1-xAs
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Inverted Charge States of Anion and Cation-Site Vacancies in Zinc Blende Semiconductors:Theory
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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Gallium Interstitials in GaAs/AlGaAs...

Gallium Interstitials in GaAs/AlGaAs Heterostructures Investigated by Optically and Electrically Detected Magnetic Resonance

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1309-1314

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1309

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Online since:

December 1997

Authors:

T. Wimbauer, M.S. Brandt, M.W. Bayerl, M. Stutzmann, D.M. Hofmann, Yasunori Mochizuki, M. Mizuta

Keywords:

GaAs, Optically and Electrically Detected Magnetic Resonance

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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