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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Defect Characterization of II-VI Compound...

Defect Characterization of II-VI Compound Semiconductors Using Positron Lifetime Spectroscopy

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1335-1340

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1335

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Online since:

December 1997

Authors:

G. Tessaro, Peter Mascher

Keywords:

CdTe, Point Defect, Positron Lifetime Spectroscopy, ZnSe

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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